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Electro Mobility 

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  1. 2023 | OriginalPaper | Chapter

    Enhancing Sustainable Development Through Electrooculography Based Computer Control System for Individuals with Mobility Limitations

    Electrooculogram (EOG), the bio-potential produced around eyes due to eyeball motion can be used to track eye movements. This system is especially helpful for individuals with motor disabilities like ALS (Amyotrophic Lateral Sclerosis) and …

    Authors:
    Pragya Bhalla, Diksha Tiwary, Manasvi Aggarwal, Sakshi Sharma, Monika Kaushik, Megha Agarwal
    Published in:
    Sustainable Development through Machine Learning, AI and IoT (2023)
  2. 2024 | OriginalPaper | Chapter

    Design and Performance Analysis of InSb/InGaAs/InAlAs High Electron Mobility Transistor for High-Frequency Applications

    This paper investigates the performance of a high electron mobility transistor (HEMT) with a 0.4 µm gate size enhancement mode. The device is composed of an InGaAs/InAlAs structure grown on an InSb substrate, with heavily doped In0:6Ga0:4As …

    Authors:
    Prajjwal Rohela, Sandeep Singh Gill, Balwinder Raj
    Published in:
    Proceedings of Congress on Control, Robotics, and Mechatronics (2024)
  3. 2024 | OriginalPaper | Chapter

    Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

    The mobility, µ of electrons shows oscillating behavior in an asymmetric GaAs/InxGa1-xAs Quantum Well (QW) Field Effect Transistor (FET) structure. So as to analyze µ, we take asymmetric doping concentrations, varying Nd1 in the substrate barrier …

    Authors:
    Sangita R. Panda, Manoranjan Pradhan, Trinath Sahu, Ajit Kumar Panda
    Published in:
    Micro and Nanoelectronics Devices, Circuits and Systems (2024)
  4. 2024 | OriginalPaper | Chapter

    Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications

    In this chapter, the evolution of high-speed devices for high performance and power used in several applications has been introduced. To design, characterize and fabricate the such type of devices, the elemental semiconducting materials used in …

    Authors:
    E. Raghuveera, G. Purnachandra Rao, Trupti Ranjan Lenka
    Published in:
    Micro and Nanoelectronics Devices, Circuits and Systems (2024)
  5. 2023 | OriginalPaper | Chapter

    Proton Mobility in Solid Electrolyte: The Heart of Fuel Cell

    Fuel cells are devices that allow for the direct conversion of the enthalpy of combustion, or chemical energy, of fuels into electricity. A high ionic mobility suggests that the ions have relatively small ionic radii and just one charge. This is …

    Authors:
    Bibek Kumar Sonu, Gayatri Dash, Ela Rout
    Published in:
    Energy Materials (2023)
  6. 01-10-2023 | OriginalPaper

    Effect of electro-photocatalytic decomposition (mainly Eh–pH) on association of metals with sedimentary phases and their mobility in the wetland ecosystem

    Heavy metal (HM) mobility and dynamics are greatly influenced by environmental factors, such as oxidation–reduction potential, pH, and salinity. The present work used an experimental setup to evaluate the influence of oxidation conditions and …

  7. Open Access 21-06-2023 | Online First

    Assessment of selected environmental and economic factors for the development of electro-mobility in Poland

    Electromobility is now widely recognized as a remedy for the growing level of greenhouse gas emissions from the transport sector. The result of this approach is the agreement of the European Commission with the member states regarding the …

  8. 01-02-2023 | OriginalPaper

    Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers

    In the present work, we study the temperature-dependent (30–300 K) electron Hall mobility of liquid phase epitaxy (LPE)-grown n-type InPBi/InP epilayers prepared using growth melts containing high Bi (≈ 18 wt%) content. InPBi epilayer grown with …

  9. 04-11-2022 | OriginalPaper

    Electrodeposition of low-cost SnS films with increasing carrier concentration and mobility by aluminum doping and texture adjustment

    SnS is considered being a promising thermoelectric material because it has the same crystal structure as that of SnSe which has excellent thermoelectric properties. However, the low electronic transmission properties confine its performances. The …

  10. 2023 | OriginalPaper | Chapter

    Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

    This paper presents the sensitivity analysis of an AlGaN/GaN single gate MOSHEMT with a tapered high-κ dielectric with a cavity under the gate for neutral biomolecules. The device performance exhibits an enhanced gm and reduced leakage current by …

    Authors:
    Ananya Dastidar, Tapas Kumar Patra
    Published in:
    Micro and Nanoelectronics Devices, Circuits and Systems (2023)
  11. 2023 | OriginalPaper | Chapter

    High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis

    High Electron Mobility Transistor (HEMT) attained great interest because of its superior electron transport making it suitable for applications in high-speed circuits and high power requirements. These devices are finding special interest to …

    Authors:
    Kalyan Biswas, Rachita Ghoshhajra, Angsuman Sarkar
    Published in:
    HEMT Technology and Applications (2023)
  12. 2023 | OriginalPaper | Chapter

    Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review

    ZnO material exhibits superior properties required for several electronic applications. It has been noticed that the different temperature-based models of conventional AlGaN/GaN HEMTs have been widely studied; however, physics-based analytical …

    Authors:
    Yogesh Kumar Verma, Varun Mishra, Lucky Agarwal, Laxman Singh, Santosh Kumar Gupta
    Published in:
    HEMT Technology and Applications (2023)
  13. 25-04-2022 | OriginalPaper

    Design and Analysis of a Field Plate Engineered High Electron Mobility Transistor for Enhanced Performance

    In this paper, the impact of drain drift region and vertical scaling on breakdown performance is investigated through exhaustive technology computer-aided design simulations. The breakdown behavior for drain-connected, gate-connected and dual …

  14. 19-03-2022 | OriginalPaper

    High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches

    Band-engineered GaN/quasi-AlGaN material system is suitably deployed for designing high power RF switches in THz domain. Unique superlattice-based, quasi-AlGaN barrier results in increase of electron effective mass along the growth direction. That …

  15. 28-06-2022 | OriginalPaper

    Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

    This work presents an investigation of the performance assessment of E-mode Mg-doped In0.2Ga0.8N/Al0.23Ga0.77N/GaN/Al0.05Ga0.95N on AIN substrate use for high-power applications. The effect of the back-barrier on AIN substrate to boost the …

  16. 10-02-2022 | OriginalPaper

    Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison

    The intrinsic properties of the wide band gap semiconductors, specifically the wide band gap energy that enables higher junction operating temperatures, make these materials particularly attractive for high power device applications. A very …

  17. 16-11-2021 | EditorialNotes

    Title of the special issue: Perspective solutions of electronic systems supporting the development of carbon-free mobility

  18. 2022 | OriginalPaper | Chapter

    Electro-Mobility Solution Towards the Ultimate Public Transport System with a Case Study of Singapore

    Singapore is often used as the benchmark in electromobility concept by other megacities. The concept of electromobility in megacities is introduced with Singapore as a case study [24]. Singapore’s electromobility concept used the traffic and power …

    Authors:
    Dr. Ali Aryo Bawono, Dr.-Ing. Ali Aryo Bawono
    Published in:
    Engineered Cementitious Composites for Electrified Roadway in Megacities (2022)
  19. 2021 | OriginalPaper | Chapter

    Computing Transient Response of Drain Current for High Electron Mobility Transistor in Presence of Hot Electrons

    Transient response effect on drain current in HEMT is numerically computed considering presence of hot electrons inside the channel. Hot electrons are released from trap state to form 2DEG, which also increases device temperature. Effect of gate …

    Authors:
    Swarnav Mukhopadhyay, Anwita Nath, Purbasha Ray, Arpan Deyasi
    Published in:
    Proceeding of Fifth International Conference on Microelectronics, Computing and Communication Systems (2021)
  20. 10-07-2021 | OriginalPaper

    A new design for improving the performance of AlGaN/GaN high-electron-mobility transistors

    Gallium nitride (GaN) has found a unique role in the design of high-electron-mobility power devices due to its wide bandgap, high breakdown electric field, and appropriate saturation velocity. The main aim of this paper is to optimize the …

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