Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Published in:
A Binary Pattern Matching Task Performed in an ePCM-Based Analog In-Memory Computing Unit Read chapter Read first chapter

2024 | OriginalPaper | Chapter

Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors

Authors : Ciro Scognamillo, Antonio Pio Catalano, Markus Müller, Michael Schröter, Vincenzo d’Alessandro

Published in: Proceedings of SIE 2023

Publisher: Springer Nature Switzerland

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

In this paper, two techniques developed to experimentally extract the influence of nonlinear thermal effects on the thermal resistance of bipolar transistors are tested. The validation is performed by applying the techniques to data obtained from DC electrothermal simulations of a transistor modeled with HICUM/L2, where an accurate formulation of the thermal resistance accounting for nonlinear thermal effects is implemented.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
previous chapter Printable Thermoelectric Device for Low Temperature Energy Harvesting
next chapter Characterization of PIN Diode for T-R Radar Limiter Design at X-Band
Literature
1.
d’Alessandro, V., et al.: Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies. Microelectron. Reliab. 78, 233–242 (2017)CrossRef
2.
d’Alessandro, V., Catalano, A.P., Codecasa, L., Zampardi, P.J., Moser, B.: Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments. Int. J. Numer. Model.: Electron. Netw., Devices Fields 32(2), e2530 (2019)CrossRef
3.
d’Alessandro, V., et al.: Impact of layout and technology parameters on the thermal resistance of SiGe:C HBTs. In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 137–140. Austin, TX, USA (2010)
4.
d’Alessandro, V., Sasso, G., Rinaldi, N., Aufinger, K.: Influence of scaling and emitter layout on the thermal behavior of toward-THz SiGe: C HBTs. IEEE Trans. Electron Devices 61(10), 3386–3394 (2014)CrossRef
5.
La Spina, L., d’Alessandro, V., Russo, S., Rinaldi, N., Nanver, L.K.: Influence of concurrent electrothermal and avalanche effects on the safe operating area of multifinger bipolar transistors. IEEE Trans. Electron Devices 56(3), 483–491 (2009)
6.
d’Alessandro, V., Catalano, A.P., Scognamillo, C., Codecasa, L., Zampardi, P.J.: Analysis of electrothermal effects in devices and arrays in InGaP/GaAs HBT technology. MDPI Electron. 10(6), 757 (2021)
7.
Seiler, U., Koenig, E., Narozny, P., Dämbkes, H.: Thermally triggered collapse of collector current in power heterojunction bipolar transistors. In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 257–260. Minneapolis, MN, USA (1993)
8.
Liu, W., Nelson, S., Hill, D.G., Khatibzadeh, A.: Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities. IEEE Trans. Electron Devices 40(11), 1917–1927 (1993)CrossRef
9.
Walkey, D.J., Smy, T.J., Macelwee, T., Maliepaard, M.: Compact representation of temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices using linear models. Solid-State Electron. 46(6), 819–826 (2002)CrossRef
10.
d’Alessandro, V., et al.: Experimental determination, modeling, and simulation of nonlinear thermal effects in bipolar transistors under static conditions: A critical review and update. MDPI Energies 15(15), 5457 (2022)CrossRef
11.
d’Alessandro, V.: Analytical modeling and numerical simulation of nonlinear thermal effects in bipolar transistors. In: Proceedings of the 28th international workshop on THERMal INvestigations of ICs (THERMINIC). Dublin, Ireland (2022)
12.
13.
Scognamillo, C., et al.: Improved nonlinear electrothermal simulation of bipolar transistors: Application to InP/InGaAs DHBTs. In: Proceedings of the 29th international workshop on THERMal INvestigations of ICs (THERMINIC). Budapest, Hungary (2023)
14.
Yeats, B.: Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods. In: Technical Digest of the IEEE GaAs IC Symposium, pp. 59–62. Monterey, CA, USA (1999)
15.
Bovolon, N., Baureis, P., Müller, J.-E., Zwicknagl, P., Schultheis, R., Zanoni, E.: A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans. Electron Devices 45(8), 1846–1848 (1998)CrossRef
16.
Menozzi, R., Barrett, J., Ersland, P.: A new method to extract HBT thermal resistance and its temperature and power dependence. IEEE Trans. Device Mater. Reliab. 5(3), 595–601 (2005)CrossRef
17.
Schröter, M., Chakravorty, A.: Compact hierarchical bipolar transistor modeling with HICUM. World Scientific Publishing, Singapore (2010)CrossRef
18.
19.
Urteaga, M., Griffith, Z., Seo, M., Hacker, J., Rodwell, M.J.W.: InP HBT technologies for THz integrated circuits. Proc. IEEE 105(6), 1051–1067 (2017)CrossRef
20.
Ahmed, A.S.H., Soylu, U., Seo, M., Urteaga, M., Rodwell, M.J.W.: A compact H-band power amplifier with high output power. In: Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) symposium, pp. 123–126. Atlanta, GA, USA (2017)
21.
Carlslaw, H.S., Jaeger, J.C.: Conduction of heat in solids, 2nd edn. Oxford University Press, New York, NY, USA (1959)
22.
Joyce, W.B.: Thermal resistance of heat sinks with temperature-dependent conductivity. Solid-State Electron. 18(4), 321–322 (1975)CrossRef
23.
24.
Dawson, D.E., Gupta, A.K., Salib, M.L.: CW measurements of HBT thermal resistance. IEEE Trans. Electron Devices 39(10), 2235–2239 (1992)CrossRef
25.
Rieh, J.S., Greenberg, D., Jagannatan, B., Freeman, G., Subanna, S. Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. In: Digest of Papers of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 110–113. Ann Arbor, MI, USA (2001)
26.
d’Alessandro, V., et al.: A critical review of techniques for the experimental extraction of the thermal resistance of bipolar transistors from DC measurements–Part I:: thermometer-based approaches. MDPI Electron. 12(16), 3471 (2023)
Metadata
Title
Validation of Thermometer-Based Techniques to Experimentally Extract the Impact of Nonlinear Thermal Effects on the Thermal Resistance of Bipolar Transistors
Authors
Ciro Scognamillo
Antonio Pio Catalano
Markus Müller
Michael Schröter
Vincenzo d’Alessandro
Copyright Year
2024
Book
Proceedings of SIE 2023

Print ISBN: 978-3-031-48710-1

Electronic ISBN: 978-3-031-48711-8

Copyright Year: 2024

DOI
https://doi.org/10.1007/978-3-031-48711-8_10